Method for making a wire nanostructure in a semiconductor film

摘要

This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film ( 1 ) extending between a first terminal ( 4 ) and a second terminal ( 5 ), and passage of a current between the first and the second terminals so as to form at least one continuous overthickness (R 1 , R 2 , R 3 ) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.