发明名称 |
Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same |
摘要 |
Integrated circuit devices are provided having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in a lower region of the contact hole and a bottom electrode in the contact hole has a bottom surface on a top surface of the vertical diode. The bottom electrode is self-aligned with the vertical diode. A top surface area of the bottom electrode is less than a horizontal section area of the contact hole. Methods of forming the integrated circuit devices and phase change memory cells are also provided.
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申请公布号 |
US2006284237(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060389996 |
申请日期 |
2006.03.27 |
申请人 |
PARK JAE-HYUN;OH JAE-HEE;LEE SE-HO;JEONG WON-CHEOL |
发明人 |
PARK JAE-HYUN;OH JAE-HEE;LEE SE-HO;JEONG WON-CHEOL |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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