发明名称 |
Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate |
摘要 |
A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
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申请公布号 |
US2006286770(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060509047 |
申请日期 |
2006.08.24 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE (CEA) |
发明人 |
GHYSELEN BRUNO;AULNETTE CECILE;BATAILLOU BENOIT;MAZURE CARLOS;MORICEAU HUBERT |
分类号 |
H01L21/30;H01L21/46;H01L21/762 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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