| 摘要 |
A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor structure is provided which comprises a substrate ( 203 ), first and second gate electrodes ( 219 ) disposed over the substrate, each of said first and second gate electrodes having first and second sidewalls, and first ( 223 ) and second ( 225 ) sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist ( 231 ) is then disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered, after which the first set of spacer structures is partially etched.
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