| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to prevent a profile variation of a photoresist pattern in long and short axes by using the photoresist pattern in a line type, thereby improving the uniformity in a wafer. A substrate with a layer to be patterned is prepared, and then plural line patterns(20) are formed on the layer at regular intervals. In order to remove the unnecessary line pattern, a photomask(30) is formed on the line patterns to open a portion of the line patterns in a width wider than the line pattern. The substrate is subjected to exposing and developing process by using the photomask to deform the line patterns into an isolated pattern.</p> |
