摘要 |
PURPOSE:To prevent the increase in a substrate temp. while vapor deposition of glass or plastic optical parts which require high dimensional accuracy are performed and to prevent changes in the dimensional accuracy after vapor deposition by using WO3 as a high refractive index material having low radiation heat from a vapor source. CONSTITUTION:An antireflection film which minimizes the reflectance for the designed wavelength lambda can be formed by forming a first WO3 layer to 0.103lambda film thickness and a second SiO2 layer to 0.317lambda film thickness. More preferably, a first WO3 layer is formed to 0.069lambda film thickness, second SiO2 layer to 0.080lambda, third WO3 layer to 0.436lambda, and fourth SiO2 layer to 0.241lambda. Thus, the obtd. antireflection film has a wide antireflection wavelength region from 90% to 125% of the designed wavelength with <0.5% reflectance. |