| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to make a stable align mark in a CMOS image sensor by forming a groove on an isolation film which is used as an align mark forming region. An isolation film(203) is formed in a scribe lane on a semiconductor(200), and an align mark region(AM) is defined in the isolation film. The isolation film has a groove(210) in the align mark region. An interlayer dielectric(205) is formed on the entire surface of the substrate, and has a hole(211) for exposing the groove. An align mark forming hole(220) is defined by the hole and the groove to have a depth of 5500 to 6500 Angstrom. A first metal layer(207) is formed on the interlayer dielectric and the isolation film.</p> |
