发明名称 Surface acoustic wave element and manufacturing method thereof
摘要 A surface acoustic wave (SAW) element including a semiconductor substrate on which a semiconductor wiring region and a SAW region are formed alongside in a same plane, a metal wiring formed in the semiconductor wiring region, an insulating layer including the metal wiring and formed throughout on surfaces of the semiconductor wiring region and the SAW region, a most upper layer of the insulating layer formed so as to have a one flat surface throughout the semiconductor wiring region and the SAW region and a uniform thickness from an upper face of the semiconductor substrate, a piezoelectric layer formed on the most upper layer of the insulating layer and an inter digital transducer (IDT) formed on the piezoelectric layer in the SAW region.
申请公布号 US7301423(B2) 申请公布日期 2007.11.27
申请号 US20050282752 申请日期 2005.11.21
申请人 SEIKO EPSON CORPORATION 发明人 FURUHATA MAKOTO;GOTO KENJI;SATO HISAKATSU
分类号 H03H9/25 主分类号 H03H9/25
代理机构 代理人
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