| 发明名称 |
STRUCTURE OF STRAINED SILICON ON INSULATOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO<SUB>2 </SUB>layer formed on the insulating substrate, and a strained silicon layer formed on the SiO<SUB>2 </SUB>layer.
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| 申请公布号 |
US2007284611(A1) |
申请公布日期 |
2007.12.13 |
| 申请号 |
US20070843166 |
申请日期 |
2007.08.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-SOO;XIANYU WENXU;NOGUCHI TAKASHI |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
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代理人 |
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