NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A non-volatile memory device and a method for manufacturing the same are provided to suppress loss of an active region in an edge of a peripheral region by forming sequentially gate electrodes of a MOS transistor. A cell region and a peripheral region are defined on a semiconductor substrate(105). A memory transistor includes a storage node layer(125a) of the cell region and a control gate electrode of the storage node layer. A MOS transistor includes a first gate electrode(145b) of the peripheral region and a second gate electrode(170a,170b) connected electrically to the first gate electrode. The control gate electrode of the memory transistor and the second gate electrode of the MOS transistor are formed with the same material. The control gate electrode is arranged to surround a sidewall of the storage node layer along a word line direction.