| 摘要 |
Methods for forming fully silicided gates over fins of FinFet devices are disclosed. The disclosure provides methods for patterning a gate stack over each fin from a polysilicon layer and a polysilicon germanium layer, and then removing the polysilicon germanium layer over one of the fins. The disclosure further includes forming a metal layer over both fins and annealing the FinFet device to form fully silicided gates over each fin of the FinFet device.
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