| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield of a display device. SOLUTION: A polysilicon layer Po has an active polysilicon layer 36 and a base polysilicon layer 37. In the active polysilicon layer 36, an TFT element region is formed which is doped with conductive impurities. On the base polysilicon layer 37, redundant wiring 41 is formed. On the TFT element region 36, a gate electrode layer 42 is formed across the gate insulating film 32. The gate electrode layer 42 forms a gate line GL. On the gate electrode layer 42, a first inter-layer insulating film 33 is formed. On the first inter-layer insulating film, a source electrode layer 44 is formed at a position corresponding to the top of the redundant wiring 41. When the source electrode layer 44 has a disconnection, a source electrode layer 44 having no disconnection and the redundant wiring 41 disposed below it are connected by laser irradiation etc., to sandwich the disconnection part. COPYRIGHT: (C)2008,JPO&INPIT |
