| 摘要 |
A cleaning method for managing a bottom electrode inside an etching chamber is provided to shorten a time required for managing a bottom electrode by using a chemical material of liquid state in order to remove foreign material of a surface of the bottom electrode in which embossing is formed. A take-in test step(51) measures a dimension of a fixed part of a bottom electrode separated from an etching chamber. A preprocess step(52) cleans a surface of the bottom electrode by using mixture solution of KOH, H2O2, and deionized water for 10~60 minutes. A cleaning step(53) cleans the surface of the bottom electrode by using mixture solution of HF, HNO3, and deionized water for 10~60 minutes. A neutralization process step(54) cleans the surface of the bottom electrode by using the deionized water for 30~60 minutes after cleaning the surface of the bottom electrode by using mixture solution of acid diluents and deionized water for 10~60 minutes. A post process step(55) cleans the surface of the bottom electrode by using alcohol for 30~60 minutes. A baking step(56) leaves the surface of the bottom electrode at a fan flow atmosphere of 20~60 degrees for 3~10 hours after blowing the surface of the bottom electrode at a room temperature for 10~30 minutes. A take-out test step(57) compares a dimension of the surface of the baked bottom electrode with the dimension measured in the take-in test step.
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