| 摘要 |
A method for improving a step coverage of a copper barrier film is provided to improve a step coverage of a copper barrier film by removing an overhang generated in a top part of a via hole or a trench after depositing the copper barrier film. A via hole pattern(202) is formed in order to connect a bottom metal wiring inside an interlayer insulation film(200) on a semiconductor substrate. A first tantalum film(204) is deposited in order to prevent copper diffusion inside the via hole. An overhang(206) generated in a top part of the via hole is removed through N2 plasma sputtering. After the N2 plasma sputtering, a tantalum nitride film is formed on a surface of the first tantalum film through annealing. A copper barrier film is formed by depositing a second tantalum film on a top part of the tantalum nitride film.
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