发明名称 INDUCTIVELY COUPLED TRANSFORMER WITH TUNABLE IMPEDANCE MATCH NETWORK
摘要 A packaged RF power transistor includes an RF input lead, a DC gate bias lead, an RF power transistor comprising gate, source and drain terminals, and an input match network. The input match network includes a primary inductor electrically connected to the RF input lead, a secondary inductor electrically connected to the gate terminal and to the DC gate bias lead, and a tuning capacitor electrically connected to the RF input lead and physically disconnected from the gate terminal. The input match network is configured to block DC voltages between the RF input lead and the gate terminal and to propagate AC voltages in a defined frequency range from the RF input lead to the gate terminal. The tuning capacitor is configured to adjust a capacitance of the input match network based upon a variation in DC voltage applied to the RF input lead.
申请公布号 US2016233849(A1) 申请公布日期 2016.08.11
申请号 US201514618305 申请日期 2015.02.10
申请人 Infineon Technologies AG 发明人 Marbell Marvin;Hashimoto EJ;Agar Bill
分类号 H03H11/28 主分类号 H03H11/28
代理机构 代理人
主权项 1. A packaged RF power transistor, comprising: an RF input lead; a DC gate bias lead; an RF power transistor comprising gate, source and drain terminals; and an input match network, comprising: a primary inductor electrically connected to the RF input lead;a secondary inductor electrically connected to the gate terminal and to the DC gate bias lead; anda tuning capacitor electrically connected to the RF input lead and physically disconnected from the gate terminal; wherein the input match network is configured to block DC voltages between the RF input lead and the gate terminal and to propagate AC voltages in a defined frequency range from the RF input lead to the gate terminal, and wherein the tuning capacitor is configured to adjust a capacitance of the input match network based upon a variation in DC voltage applied to the RF input lead.
地址 Neubiberg DE