发明名称 Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
摘要 A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material.
申请公布号 US9419198(B2) 申请公布日期 2016.08.16
申请号 US201113278074 申请日期 2011.10.20
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 Yu Jen-Kan;Mitrovic Slobodan;Heath James R.
分类号 H01L35/02;H01L35/26;B82Y30/00;B82Y40/00;B82Y10/00;H01L31/18 主分类号 H01L35/02
代理机构 Lewis Roca Rothgerber Christie LLP 代理人 Lewis Roca Rothgerber Christie LLP
主权项 1. A nanomesh phononic structure comprising: a mesh comprising a first material, the mesh having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material, wherein the phononic size is in the range from 5 nm to 100 nm, wherein the phononic-sized features are discontinuous holes or voids, wherein the phononic-sized features are filled with a second material different from the first material, wherein the first material comprises silicon, and wherein a thermal conductivity of the nanomesh phononic structure is greater than 1 W m−1 K−1 and less than or equal to 2 W m−1 K−1.
地址 Pasadena CA US