| 发明名称 | Junctionless tunnel fet with metal-insulator transition material | ||
| 摘要 | Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer. | ||
| 申请公布号 | US9419115(B2) | 申请公布日期 | 2016.08.16 |
| 申请号 | US201514876006 | 申请日期 | 2015.10.06 |
| 申请人 | International Business Machines Corporation | 发明人 | Bajaj Mohit;Gundapaneni Suresh;Konar Aniruddha;Murali Kota V. R. M.;Nowak Edward J. |
| 分类号 | H01L29/02;H01L29/66;H01L29/78;H01L29/10;H01L29/51 | 主分类号 | H01L29/02 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Meyers Steven J.;Hoffman Warnick LLC |
| 主权项 | 1. An integrated circuit (IC) structure comprising: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure electrically coupled to the doped semiconductor layer; and a second gate structure electrically coupled to the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer wherein a separation distance between the first gate material and the second gate material is larger than a separation distance between the second gate material and the source contact. | ||
| 地址 | Armonk NY US | ||