| 发明名称 | Application of super lattice films on insulator to lateral bipolar transistors | ||
| 摘要 | A lateral bipolar junction transistor including a base region on a dielectric substrate layer. The base region includes a layered stack of alternating material layers of a first lattice dimension semiconductor material and a second lattice dimension semiconductor material. The first lattice dimension semiconductor material is different from the second lattice dimension semiconductor material to provide a strained base region. A collector region is present on the dielectric substrate layer in contact with a first side of the base region. An emitter region is present on the dielectric substrate in contact with a second side of the base region that is opposite the first side of the base region. | ||
| 申请公布号 | US9425260(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201414208704 | 申请日期 | 2014.03.13 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Chan Kevin K.;Hekmatshoartabari Bahman;Ning Tak H. |
| 分类号 | H01L27/082;H01L29/15;H01L29/735;H01L29/165;H01L29/205;H01L29/10;H01L29/161;H01L29/737;H01L29/66;H01L21/02 | 主分类号 | H01L27/082 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A lateral bipolar junction transistor comprising: a base region on a dielectric substrate layer, wherein the base region includes a layered stack of alternating material layers that repeat at least once of a first lattice dimension material and a second lattice dimension material, wherein the first lattice dimension material is different from the second lattice dimension material to provide a strained base region; a collector region is present on the dielectric substrate layer in contact with a first side of the base region; and an emitter region is present on the dielectric substrate in contact with a second side of the base region that is opposite the first side of the base region. | ||
| 地址 | Armonk NY US | ||