Semiconductor device and manufacturing method of the same

摘要

Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.

主权项

1. A semiconductor device, comprising:
a bonded substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the bonded substrate includes a first substrate including the first conductive layer and a second substrate including the second conductive layer; an insulating film; a large-diameter concave portion having, on a main side of the bonded substrate, an opening sized to overlap at least a part of an interconnect of the first conductive layer and at least a part of an interconnect of the second conductive layer in a plane section of the bonded substrate, wherein the large-diameter concave portion includes a first step-like portion and a second step-like portion; a small-diameter concave portion extended from the large-diameter concave portion; a conductive member provided in a connection hole made up of the large and small-diameter concave portions, wherein the first step-like portion is electrically connected to at least a portion of the first conductive layer and the second step-like portion is connected solely to a portion of the insulating film, and wherein the small-diameter concave portion is electrically connected to the second conductive layer.