发明名称 GAS SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a gas sensor that has a Schottky barrier height corresponding to the work function of metal material used for a metal electrode.SOLUTION: A gas sensor 5 includes: a detection film 1 made of a two-dimensional semiconductor material of any one of MoS2, MoSe2, MoTe2, WS2, WSe2, black phosphorus, and BCN on a substrate 4; a graphene 2 partially contacting with the detection film 1; and a metal electrode 3 contacting with a side of the graphene 2 which is opposite to the side contacting with the detection film 1. Changing the responsibility by using various different materials for the metal electrode 3 provided to the detection film 1 of the two-dimensional semiconductor material can increase the number of types of detectable gases and improve the sensitivity to gases with concentrations around a ppb level.SELECTED DRAWING: Figure 1
申请公布号 JP2016151558(A) 申请公布日期 2016.08.22
申请号 JP20150030724 申请日期 2015.02.19
申请人 FUJITSU LTD 发明人 YAMADA AYAKA;SATO SHINTARO
分类号 G01N27/12;G01N27/04 主分类号 G01N27/12
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