| 发明名称 | Confined semi-metal field effect transistor | ||
| 摘要 | Exemplary embodiments are disclosed for a semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the contact region and the semiconductor terminal that transitions from a substantially zero gap semi-metal beginning at an interface of the contact region into a semiconductor with an energy band gap towards the semiconductor terminal. | ||
| 申请公布号 | US9431529(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201514625376 | 申请日期 | 2015.02.18 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Hatcher Ryan M.;Kittl Jorge A.;Bowen Robert C. |
| 分类号 | H01L29/745;H01L29/74;H01L29/768;H01L27/095;H01L21/335;H01L29/78;H01L29/66;H01L29/06 | 主分类号 | H01L29/745 |
| 代理机构 | Convergent Law Group LLP | 代理人 | Convergent Law Group LLP |
| 主权项 | 1. A semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the semi-metal contact region and the at least one semiconductor terminal, wherein the semi-metal transition region transitions from a substantially zero gap semi-metal beginning at an interface of the semi-metal contact region and the semi-metal transition region into a semiconductor with an energy band gap towards the at least one semiconductor terminal. | ||
| 地址 | Gyeonggi-Do KR | ||