| 摘要 |
PURPOSE:To perform a high-temperature die bonding and a high-temperature wire bonding. CONSTITUTION:A semiconductor chip 1 is fixed on an island 2 by a die bonding material 4, and a pad on the semiconductor chip 1 and an LF lead 3 are connected by a bonding wire 5. A heat spreader 6 is fixed on the semiconductor chip 1 by an insulating adhesive agent 7, and the whole of a semiconductor device is sealed with a sealing resin 8. Thereby, for the adhering of the heat spreader 6 is performed after the completion of bonding processes, without the consideration of the heat resistance of the adhesive agent 7, the high- temperature bondings of the chip 1, etc., are made possible. |
