| 摘要 |
an exposed hydrophilic surface of silicon oxide is rendered hydrophobic by heating it to dry it, treating with dry benzene or ethane sulphonic acid, removing the excess of acid and drying the surface. Methyl, ethyl or isopropyl alcohol may be used to remove the excess of acid. A silicon dioxide surface is first heated to 138-160 DEG C. and then exposed to the sulphonic acid at either 80-130 DEG C. for benzene sulphonic acid or 30-50 DEG C. for ethane sulphonic acid. It is stated that a hydrophobic surface is produced by esterification of the surface OH groups with a sulphonate anion. |
