Compact noncontact excess carrier lifetime characterization apparatus.

摘要

An apparatus (10) is provided for measuring the excess carrier lifetime in a semiconductor material, such as an HgCdTe wafer (MCT). The apparatus includes a computer controller (56) which automates the functions of the apparatus, including the operation of the shutter (28) to control the time the testing samples are exposed to the excitation energy from a laser (14), the laser energy intensity on the sample, the position of the wafer controlled by the computer controller operating a motorized sample positioner (39) and maintaining the temperature of the sample. Multiple samples are taken by the apparatus which are averaged and analyzed to result in a characterization of the carrier lifetime.