发明名称 |
Dual plane well-type two-phase ccd |
摘要 |
A charge coupled device having geometries suitable for fabrication in high density packages (64,000 bits per chip-1,000,000 bits per chip) is comprised of a semiconductor substrate having dopant impurity atoms of a first type and a first surface. A charge transfer channel lies in the substrate near the first surface, and it is overlaid by an insulating layer of non-uniform thickness. A plurality of first and second electrodes lie on the insulating layer traversely to the channel. A well region of dopant impurity atoms of a second type opposite to the first type lies under each of the electrodes. The non-uniform insulating layer underlies each of the first electrodes by a first uniform thickness, underlies the second electrodes by a second uniform thickness, and separates the each of the first and second electrodes by approximately the second thickness. The second thickness is 20%-60% greater than the first thickness to greatly reduce inter-electrode shorts in high density packages. A shallow layer of dopant impurity atoms of the second type may be provided under the second electrodes to compensate for shift flatband voltage shifts due to the thick insulating layer.
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申请公布号 |
US4228445(A) |
申请公布日期 |
1980.10.14 |
申请号 |
US19770845982 |
申请日期 |
1977.10.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TASCH, JR., AL F.;CHATTERJEE, PALLAB K. |
分类号 |
H01L29/762;H01L21/339;H01L29/10;H01L29/423;H01L29/768;(IPC1-7):H01L29/78;H01L29/04;G11C19/28 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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