| 摘要 |
PURPOSE:To obtain a reflection preventive film having a mechanical protective function by forming silicon nitride or aluminum oxide on a semiconductor layer or an upper surface of an opposed electrode. CONSTITUTION:A metallic film 2 is formed on an insulating carrier 1, the polycrystal semiconductor layers 5, 6 of Si, Ge, CdS, SeS, BP, etc. are shaped through a decompression gaseous phase method or a glow discharge method and a P-N junction or a PIN junction is obtained. The comb-teeth-shaped or rectangular opposed electrodes 7, an outside extracting port 8 and the reflection preventive film 4 are molded on the upper surface. The reflection preventive film 4 is formed by coating silicon nitride or aluminum oxide through a sputtering or gaseous phase method, and the thickness shall be the size of half a wavelength of the optimum rays. The reflection preventive film 4 may be formed so as to cover the electrodes 7. |
