| 摘要 |
PURPOSE:To produce thin films of high quality easily by acting gaseous molecular beams upon the flow of vapor deposition particles in forming the thin films by vacuum depositin. CONSTITUTION:This is utilized for production of materials for semiconductor integrated circuits, magnetic recording media, etc., wherein specific gases are introduced into a vacuum vessel and evaporation conditions are controlled to allow evaporating particles to deposit on a substrate, whereby a thin film is formed. Gaseous molecular beams are crossed to the evaporating particle flow directing from a vapor source 1 to the substrate 5. Thereby, the vapor deposition in the gas is made possible without lowering the degree of vacuum in the vacuum vessel too much and therefore the thin film is not adsorbed of unnecessary gases and the film of high quality is obtained. |
