| 摘要 |
PURPOSE:To prevent a junction breakdown in a semiconductor integrated circuit device by arranging a depletion type Tr around a contact as a high resistance region, and alleviating a current concentration in a P-N junction in the vicinity of the contact at the time of applying an excessively high input. CONSTITUTION:A P<+> type diffused layer 14, an Si oxidized film 15 and an N<+> type diffused region 16 are sequentially formed on a substrate 13, and a depletion type TrD of polysilicon gate P0 is formed in ?-shape to surround a contact CH of the region 16 with an input pad 18. A high resistance region requires a large area, but high resistance is obtained in an ultrafine area by substituting a load resistance T2 for the Tr4 by shortcircuiting the gate and the drain, thereby using the Tr as a high resistance region. In this manner, the junction breakdown at the time of applying an excessively high input can be prevented. |
