| 摘要 |
PURPOSE:To form an upper epitaxial layer having good crystallinity in a multilayer integrated circuit by interposing an insulating film of phosphosilicate glass or borosilicate glass layer between a single crystal substrate and an epitaxial single crystal film of upper layer. CONSTITUTION:A low impurity density silicon oxidized film 43, a flat upper surface silicon oxidized film (phosphosilicate glas) 44 including phosphorus, and a low impurity density silicon nitrided film 45 are adhered onto an integrated circuit of first layer including an MOS transistor (TR) having a polysilicon gate 42 isolated between elements with an oxidized film 41 on a substrate 40, a silicon single crystal film 47 is epitaxially grown through a hole formed at the drain 46 of the MOSTR of lower layer, thereby forming an MOSTR having a polysilicon gate 48 of the upper layer. In this manner, the film 47 having good crystallinity can be formed via a flat insulating film 44. |
