| 摘要 |
PURPOSE:To form a protection film having excellent moisture resistance by a method wherein a polyimide layer having an Si nitride and a fluoride layers is provided on an electrode formed on a semiconductor substrate. CONSTITUTION:An Si nitride 2 is deposited after forming the wiring pattern 1 of a semiconductor element on the semiconductor substrate. Next, after a resist 4 is coated and a pad part is opened, a polyimide 3 is etched by an oxygen plasma with the resist 4 as a mask. Successively, the Si nitride 2 is etched by using a fluoric plasma with the polyimide 3 as a mask. Thereat, a fluoride is formed on the polyimide surface 5. By this constitution, the ununiformity of the Si nitride is compensated by the polyimide, and accordingly the impurity in the polyimide is prevented from infiltrating into the element by the Si nitride. Further, since the infiltration of water is prevented by the fluoride, a protection film with excellent reliability can be formed. |
