| 摘要 |
PURPOSE:To enable the reproducible etching by a method wherein the electric power of a high frequency power source is increased and decreased according to the detected amount corresponded to the total number of etching atoms per unit time, while the area to be etched is fixed. CONSTITUTION:A various kind of detectors, a gas flow meter 2, a vacuum gauge 3, an etching monitor 4 and a thermometer 5 are installed in a reaction chamber 1, and all of them transmit the signal to a control part 6. In the control part 6, a flow controller 8, the throttle valve 9 for an exhaust system, a high frequency power source output 10 and a cooling-heating device 11 are controlled according to the program previously inputted from an input part 7. The high frequency power source output 10 is increased and decreased particularly according to the detected amount corresponded to the total number of etched atoms per unit time. |
