| 摘要 |
PURPOSE:To simplify manufacturing process by a method wherein, utilizing the fact that the etching speed of an Si oxide film is different between the flat part and the stepwise difference, the Si oxide film at the stepwise difference is selectively etched resulting in the formation of a contact hole. CONSTITUTION:In case of forming an Si oxide film 5 in a reduced pressure furnace, when the film 5 is uniformly etched from the surface, the film 5 is previously etched at stepwise differences 6 and 7, and thus semithin films 3 and 4 expose. The difference of Si oxide film thickness does not exist between the stepwise difference and the flat part. The Si oxide film 9 at the stepwise difference of a semiconductor thin film 8 is inferior to the Si oxide film of the other part in etching resistance. Therefore, it becomes possible that the film 9 of the stepwise difference is selectively etched by etching resulting in the formation of a contact hole. |
