| 发明名称 |
Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions |
| 摘要 |
A CMOS process utilizes preferential oxidation of arsenic-doped regions and the reduced diffusivity of boron in arsenic-doped regions to eliminate photomask steps and to form self-aligned enhanced p+ and n+ contacts.
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| 申请公布号 |
US4470852(A) |
申请公布日期 |
1984.09.11 |
| 申请号 |
US19820414737 |
申请日期 |
1982.09.03 |
| 申请人 |
NCR CORPORATION |
发明人 |
ELLSWORTH, DANIEL L. |
| 分类号 |
H01L29/78;H01L21/768;H01L21/8238;H01L27/08;H01L27/092;(IPC1-7):H01L21/22;B01J17/00;H01L21/26 |
主分类号 |
H01L29/78 |
| 代理机构 |
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