ELECTRON EMISSION CATHODE MANUFACTURING METHOD USEING SIDE WALL

摘要

forming an oxide film having a predetermined pattern on a semiconductor substrate; forming an electron emission controlling electrode of the predetermined shaped structure by etching the exposed part of the semiconductor substrate at a predetermined depth; forming an insulating film which is not thicker than the height of the controlling electrode on the top of the semiconductor and the wall of the controlling electrode; forming the conducting layer by eliminating the conducting layer which is formed on the surface of the side wall of the controlling electrode in the middle of the top of controlling electrode and the insulating film; forming a side wall conducting layer which is electrically connected with the conducting layer on the wall of the controlling electrode where the conducting layer is not formed; forming making the side wall conducting layer and the controlling electrode face each other by etching the top surface of the insulating film.