| 摘要 |
<p>An oxide-superconducting device comprises first and second electrodes (7) of oxide-superconductor which are connected through a tunnel barrier layer (10). The oxide-superconductor is formed on a substrate (5) having a recess (6), and it includes grain boundaries along the recess. The tunnel barrier layer (10) is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.</p> |
