| 摘要 |
PURPOSE:To obtain a device in which the threshold value with respect to laser oscillation is largely reduced, by a constitution wherein high resistance layers are provided on current stopping layers on both sides of a V groove, lower clad layers and an active layer are not provided on the high resistance layers, a current flowing through the lateral parts of the V groove is suppressed, and wattless current is decreased. CONSTITUTION:A supplied current flows into lower clad layers 3 from a substrate 1 through a V groove 13. The current tends to spread in both directions of the grove 13. However, the spread of the current is stopped with high resistance layers comprising AlvGa1-vAs (v 0.8) 10 which are provided on both sides of the groove 13, have high resistance and form large energy barriers. Therefore, the current is efficiently injected only into an active layer 4 on the groove 13. After the current is injected into the active layer 4, the carriers tend to diffuse in the lateral directions. Since the active layer 4 is cut on the high resistance layers 10, however, the carriers are not diffused any more. The carriers are recombined in the active layer 4 and contribute to the oscillation of laser effectively. The lower clad layers 3 and the active layer 4 are not provided on the high resistance layers 10 on both sides of the groove 13 in this constitution. Thus, the current leaking to the lateral directions of the groove 13 can be suppressed.
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