| 摘要 |
<p>PURPOSE:To remarkably improve the photoconductivity of the subject film and suppress the degradation caused by the irradiation of light, by including a bivalent metal in an amorphous silicon film. CONSTITUTION:The amorphous silicon film used as the starting material is e.g. an amorphous hydrogenated silicon film having a thickness of 5,000Angstrom and produced by CVD process on a glass substrate. A bivalent metal salt selected from magnesium chloride, magnesium nitrate, calcium nitrate, etc., containing water of crystallization (e.g. magnesium chloride) is melted with heat and the above amorphous silicon film is immersed in the molten liquid e.g. at 150 deg.C for 3-20h.</p> |
