| 摘要 |
PURPOSE:To form a thin film resistor having a high sheet resistance value without thinning the thickness of the thin film resistor by annealing the formed thin film resistor in an oxygen atmosphere. CONSTITUTION:An insulating film 2 is formed on the surface of a semiconductor substrate 1, and an opening window 3 is formed by using a photolithography technology. Then, a CrSix film 11 is formed on the surface of the insulating film 2 and in an opening window 3 by sputtering. The device is annealed in oxidizing atmosphere such as hydrogen chloride or oxygen at a temperature of 500 deg.C for 30 minutes. Then, the CrSix film on the surface of the insulating film 2 is patterned, and a thin film resistor 4 is formed at the specified position on the opening window 3 and the insulating film 2. A PSG film which is to become an interlayer insulating film 6 is formed on the entire surface. Opening windows 7 are formed at both end parts of the thin film resistor 4 which is formed on the opening window 3 and on the surface of the insulating film 2 by the patterning. Finally, an aluminum layer which is to become a wiring electrode 5 is formed on the surface of the interlayer insulating film 6 and in the opening windows 7. Patterning is performed, and the wiring electrode 5 is formed. |
