| 摘要 |
PURPOSE: To invent a method for preventing a parasitic constituent from being generated at the base region of a semiconductor integrated circuit, for example, a bipolar transistor. CONSTITUTION: A semiconductor integrated circuit 1 includes a substrate 2, an epitaxial layer 3 with a base region 4 of a transistor, a first insulation oxide layer 5, a second insulation oxide layer 11, and a protection layer 13. The first oxide layer carries a strongly n<+> doped polycrystalline layer including an electrical contract layer 7, a screen layer 8, and a connection layer 9. The connection layer 9 electrically connects the screen layer 8 to the epitaxial layer 3 via an electrical contact layer 7. The screen layer prevents an inversion + and the generation of a parasitic constituent in an epitaxial layer between base regions 4. A polycrystalline layer device is simple and is manufactured by a common process stage. The device can stand a high temperature and enables the second insulation layer 11 to be adhered easily. |
