发明名称 MESFET power amplifier and its power supply unit, in particular for microwave signal amplification on board a satellite
摘要 PCT No. PCT/FR92/00781 Sec. 371 Date Feb. 25, 1993 Sec. 102(e) Date Feb. 25, 1993 PCT Filed Aug. 7, 1992 PCT Pub. No. WO93/03541 PCT Pub. Date Feb. 18, 1993.A power supply unit for a MESFET power amplifier is adapted to supply to the amplifier the voltages necessary for it to operate including a MESFET DC drain voltage. The power supply unit comprises a temperature-sensitive component near the MESFET(s) of the power circuit(s) so as to sense their temperature. A device slaved to a parameter delivered by the temperature-sensitive component varies the DC drain voltage in the same direction as the temperature varies so as to compensate by operation on the DC drain voltage the temperature-dependent antagonistic variation of gain and output power of the amplifier even if operating in saturation mode.
申请公布号 US5373250(A) 申请公布日期 1994.12.13
申请号 US19930975549 申请日期 1993.02.25
申请人 AGENCE SPATIALE EUROPEENNE 发明人 GATTI, GIULIANO;TONICELLO FERDINANDO;DENTI, FERRUCCIO;BATTISTI, ALBERTO
分类号 H03F1/30;H03F3/60;(IPC1-7):H03F3/16 主分类号 H03F1/30
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