发明名称 |
MESFET power amplifier and its power supply unit, in particular for microwave signal amplification on board a satellite |
摘要 |
PCT No. PCT/FR92/00781 Sec. 371 Date Feb. 25, 1993 Sec. 102(e) Date Feb. 25, 1993 PCT Filed Aug. 7, 1992 PCT Pub. No. WO93/03541 PCT Pub. Date Feb. 18, 1993.A power supply unit for a MESFET power amplifier is adapted to supply to the amplifier the voltages necessary for it to operate including a MESFET DC drain voltage. The power supply unit comprises a temperature-sensitive component near the MESFET(s) of the power circuit(s) so as to sense their temperature. A device slaved to a parameter delivered by the temperature-sensitive component varies the DC drain voltage in the same direction as the temperature varies so as to compensate by operation on the DC drain voltage the temperature-dependent antagonistic variation of gain and output power of the amplifier even if operating in saturation mode.
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申请公布号 |
US5373250(A) |
申请公布日期 |
1994.12.13 |
申请号 |
US19930975549 |
申请日期 |
1993.02.25 |
申请人 |
AGENCE SPATIALE EUROPEENNE |
发明人 |
GATTI, GIULIANO;TONICELLO FERDINANDO;DENTI, FERRUCCIO;BATTISTI, ALBERTO |
分类号 |
H03F1/30;H03F3/60;(IPC1-7):H03F3/16 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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