MAKING METHOD OF LOWER GATE TFT

摘要

formulating a polysilicon layer pattern used for a gate electrode whose upper edge tilted by etching the polysilicon layer for an exposed gate electrode, by passivating a sensitive film pattern used for a gate electrode mask on the top after formulating the polysilicon layer used for the gate electrode on a insulating layer; formulating a polysilicon layer pattern used for source/drain and gate oxide film on top of whole body by eliminating the sensitive film pattern used for the gate electrode mask.