| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which materializes the high integration and high reliability by simple constitution. SOLUTION: This device has a plurality of memory cells which comprise MOSFETs for address selection and capacitors for information storage, and in which the common electrode of the capacitors for information storage is supplied with the plate voltage at middle potential. In this case, it is detected indirectly, using a voltage detecting circuit or a timer circuit, that the plate voltage has reached a given potential close to the middle potential, and when it is at or under the given potential, the selective operation of the word line is inhibited or the complementary bit line is precharged to the middle potential. Then, after the plate voltage reaches the given potential, the operation is released to enable memory access.</p> |
