| 摘要 |
<p>GB9803672e step chemical vapor deposition process for depositing a titanium film over a substrate. A first step of the deposition process includes a plasma pretreatment step in which a pretreatment gas including a hydrogen-containing gas and an inert gas are flowed into a deposition zone of a substrate processing chamber. During this first deposition stage, a plasma is formed from the pretreatment gas and maintained for at least about 5 seconds in order to etch any dielectric material left in the contact area of the substrate and clean the contact area prior to deposition of the titanium layer. Next, during a second deposition stage after the first stage, a titanium-containing source and a reduction agent are introduced into the deposition zone and the plasma formed in the first stage is maintained in order to deposit the titanium layer over the substrate. In a preferred embodiment, the hydrogen-containing source included in the pretreatment gas and the reduction agent in the process gas of the second deposition stage are the same continuous flow of H2.</p> |
