发明名称 SUBSTRATE PROCESSING CHAMBER WITH TUNABLE IMPEDANCE
摘要 <p>A substrate processing system that includes a deposition chamber having a reaction zone, a plasma power source for forming a plasma within the reaction zone and an impedance tuner electrically coupled to the deposition chamber. When initially formed, the plasma has a first impedance level that can be adjusted by the impedance tuner to a second impedance level. In a preferred embodiment, the impedance tuner is a variable capacitor.</p>
申请公布号 WO1999028525(A1) 申请公布日期 1999.06.10
申请号 US1998025272 申请日期 1998.11.25
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