发明名称 Inductive load drive control circuit with semiconductor switch protection function
摘要 A control/drive circuit for an inductive load includes a semiconductor switch for connecting the load to a driving voltage and for isolating the load from the driving voltage. Also included is a switch-off function for protecting the semiconductor switch against negative voltages induced by the switching process. The switch-off function is formed by a first voltage limiting circuit (diode and zener diode) (D2,ZD2) connected between a control (gate) terminal of the semiconductor switch (T1) (MOSFET) and earth potential. More specifically, the first voltage limiting circuit is formed by a second zener diode (ZD2), in which a second diode (D2) lies between the second zener diode and the gate terminal of the MOSFET (T1) and prevents discharge of the gate terminal.
申请公布号 DE19838109(A1) 申请公布日期 2000.02.24
申请号 DE1998138109 申请日期 1998.08.21
申请人 SIEMENS AG 发明人 SANDER, RAINALD;XU, CHIHAO;SCHRITTESSER, GEROLD
分类号 H02H9/04;H03K17/06;H03K17/0812;H03K17/082;(IPC1-7):H03K17/082 主分类号 H02H9/04
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