发明名称 |
SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC DISCHARGE PROTECTION |
摘要 |
The semiconductor memory device having a power pin, a sensor amp, and an input buffer includes: a pad which is connected to the power pin; a first diffused line which is connected to the pad; a second diffused line which is connected the sensor amp. and which is divided by field oxide layer and which is formed with the same impurity of the first diffused line a third diffused line which is connected to input buffer and which is formed with the same impurity of the first diffused line and a resistance means which is connected to the second and third diffused lines.
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申请公布号 |
KR960002096(B1) |
申请公布日期 |
1996.02.10 |
申请号 |
KR19920020712 |
申请日期 |
1992.11.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWANG, BOK - MOON;HWANG, MOON - CHAN |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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