发明名称 SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC DISCHARGE PROTECTION
摘要 The semiconductor memory device having a power pin, a sensor amp, and an input buffer includes: a pad which is connected to the power pin; a first diffused line which is connected to the pad; a second diffused line which is connected the sensor amp. and which is divided by field oxide layer and which is formed with the same impurity of the first diffused line a third diffused line which is connected to input buffer and which is formed with the same impurity of the first diffused line and a resistance means which is connected to the second and third diffused lines.
申请公布号 KR960002096(B1) 申请公布日期 1996.02.10
申请号 KR19920020712 申请日期 1992.11.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWANG, BOK - MOON;HWANG, MOON - CHAN
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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