METHOD FOR PROCESSING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER

摘要

In a method for processing a semiconductor wafer which comprises chamfering, lapping, etching, and mirror-polishing, the etching is alkali etching and then acid etching. The acid etching is executed with an acid etchant consisting of hydrofluoric acid, nitric acid, phosphoric acid, and water. In a method for processing a semiconductor wafer which comprises chamfering, surface grinding, etching, and mirror-polishing, the etching is executed as mentioned above. In a method for processing a semiconductor wafer which comprises planarizing, etching, and mirror-polishing, the etching is executed as mentioned above, and the mirror-polishing is executed by the acid etching, back polishing, and then surface polishing. Thus a semiconductor wafer which improves in the flatness, the surface roughness, and the condition of the wafer back.