| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion beam etcher capable of more uniformly etching. SOLUTION: A substrate S is positioned with inclination anglesθset to A, B, C to an ion beam IB in this order and etched for etching times corresponding to the angles A-C. The etching quantity distributions differ at the angles A-C but these etching steps are repeated to improve the uniformity of the etching quantity over the entire substrate, compared to an etcher for etching a fixed inclination substrate as in the prior art.
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