发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with the use of an IIL logic gate where a cell size can be reduced without reducing the number of fan-outs. SOLUTION: In a semiconductor device where a plurality of IIL logic gates comprising an injector, a collector, a base and an emitter, are formed on a SOI substrate, a plurality of IIL logic gates have a common emitter.
申请公布号 JP2002164438(A) 申请公布日期 2002.06.07
申请号 JP20000357746 申请日期 2000.11.24
申请人 SHARP CORP 发明人 NARUSE KAZUFUMI
分类号 H01L27/082;H01L21/76;H01L21/8226;H01L27/12;(IPC1-7):H01L21/822 主分类号 H01L27/082
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