| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film wiring structure that can set specific resistance, after heat treatment in vacuum to 5μΩ.cm or less, and can build processes with superior yields. SOLUTION: This thin-film wiring structure is composed of a first conductive film 2 made of Ta or tantalum nitride that is successively formed on a substrate 1, a second conductive film 3 made of Al metal, a third conductive film 4 made of Ta or tantalum nitride, and a fourth conductive film 5 made of Ti or titanium nitride. In this case, each thickness of the first, third, and fourth conductive films should be set to 10% or smaller than the thickness in the second conductive film.</p> |
